Silicon Carbide Substrate 8inch Procudtion/Dummy Grade N Type 4H SiC Wafer IGBT - Soka Technology

SOKA TECHNOLOGY

Silicon Carbide Substrate 8inch Procudtion/Dummy Grade N Type 4H SiC Wafer IGBT

Sale price$1,650.00 USD
Number Of Item:1 Item
Grade:P-mos Grade
Thickness:350um
Quantity:
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♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 8inch;
  • Type: N;
  • Diameter: 200mm±0.2;
  • Thickness: 350um±25;
  • Surface Orientation: 4 toward [11-20]±0.5°;
  • Notch orientation:[1-100]±5°;
  • Notch depth: 1~1.5mm;
  • Micropipe: <0.2ea/cm2;
  • Resistivity: 0.015~0.025Ω;
  • TSD: <200ea/cm2;
  • TED: <3000ea/cm2;
  • BPD: <1000ea/cm2;
  • TTV≤7um;
  • Warp≤30um;
  • Bow≤-20~20umum;
  • Poly areas: None;
  • Chips/Indents: None;
  • Scratch:≤5,Total Length≤Diameter;
  • Stain: None;
  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;

Business Cooperation

United States

Contact: Sophie
Email: sophie@sokatec.com
Tel: +1-6463916255

Unite Kingdom

Contact: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Japan

Contact: Shon
Email: shon@sokatec.com
Tel:+81-368203586

Korea

Contact: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

India

Contact: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Vietnam

Contact: Ryan
Email:nguyen@sokatec.com
Zalo: +84-915750102